Rai, A.Park, J. H.Zhang, ChenxiKwak, I.Wolf, S.Vishwanath, S.Lin, X.Furdyna, J.Xing, H. G.Cho, KyeongjaeKummel, A. C.Banerjee, S. K.2019-07-122019-07-122018-06-249781538630280https://hdl.handle.net/10735.1/6695Full text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided link to the article). Non UTD affiliates will find the web address for this item by clicking the Show full item record link and copying the "relation.uri" metadata.Defect engineering of 2D semiconducting transition metal dichalcogenides (TMDCs) has been demonstrated to be a promising way to tune both their bandgaps and carrier concentrations. Moreover, controlled introduction of defects in the source/drain access regions of a TMDC FET can boost its performance by decreasing the contact resistance at the metallTMDC interface [1]. While chemical functionalization offers a facile route towards defect engineering in 2D TMDCs, several chemically-treated TMDCs have not been fully understood at the molecular level. In this study, chemical sulfur treatment (ST) utilizing ammonium sulfide [(NH4)2S] solution is shown to enhance the p-type behavior in 2D WSe2 via introduction of acceptor defect states near its valence band edge (VBE), with the results verified using detailed scanning tunneling microscopy (STM)/spectroscopy (STS) studies, field-effect transistor (FET) measurements and theoretical density-of-states (DOS) calculations.en©2018 IEEESemiconductors--DefectsField-effect transistorsScanning tunneling microscopySelenium compoundsSulfur compoundsTransition metalsSulfides—AmmoniumTungsten compoundsarticleRai, A., J. H. Park, C. Zhang, I. Kwak, et al. 2018. "Enhanced P-Type Behavior in 2D WSe2 via chemical defect engineering." Device Research Conference 76, doi:10.1109/DRC.2018.844226676