Kim, Jiyoung
Permanent URI for this collectionhttps://hdl.handle.net/10735.1/2484
Jiyoung Kim serves as Associate Professor in the Department of Materials Science and Engineering. His research interests include:
- Gate Stack Engineering for the Next Generation Complementary
- Metal-Oxide-Semiconductor (CMOS) Applications
- Nano-structure Materials and Devices for Nanoelectronics
- Novel Atomic Layer Deposition (ALD) Applications
- Novel Memory Device Materials, Fabrication and Applications
- Nano-sensor Fabrication and Applications
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Browsing Kim, Jiyoung by Author "0000-0003-2698-7774 (Cho, K)"
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Item Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)(Royal Society of Chemistry) Huang, Jie; Zhang, Hengji; Lucero, Antonio; Cheng, Lanxia; KC, Santosh; Wang, Jian; Hsu, Julia W. P.; Cho, Kyeongjae; Kim, Jiyoung; 0000 0003 8600 0978 (Hsu, JWP); 0000-0003-2698-7774 (Cho, K); 0000-0003-2781-5149 (Kim, J); Huang, Jie; Zhang, Hengji; Lucero, Antonio; Cheng, Lanxia; KC, Santosh; Wang, Jian; Hsu, Julia W. P.; Cho, Kyeongjae; Kim, JiyoungMolecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic-inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature. Self-limiting growth is observed for both HQ and DEZ precursors. The growth rate remains constant at approximately 2.8 Å per cycle at 150°C. The hybrid materials exhibit n-type semiconducting behavior with a field effect mobility of approximately 5.7 cm² V⁻¹ s⁻¹ and an on/off ratio of over 103 following post annealing at 200°C in nitrogen. The resulting films are characterized using ellipsometry, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-Vis spectroscopy, transistor behavior, and Hall-effect measurements. Density functional theory (DFT) and many-body perturbation theory within the GW approximation are also performed to assist the explanation and understanding of the experimental results. This research offers n-channel materials as valuable candidates for efficient organic CMOS devices. © 2016.Item ZnO Composite Nanolayer with Mobility Edge Quantization for Multi-Value Logic Transistors(Nature Publishing Group, 2019-04-30) Lee, L.; Hwang, Jeongwoon; Jung, J. W.; Kim, J.; Lee, H. -I; Heo, S.; Yoon, M.; Choi, S.; Van Long, N.; Park, J.; Jeong, J. W.; Kim, Jiyoung; Kim, K. R.; Kim, D. H.; Im, S.; Lee, B. H.; Cho, Kyeongjae; Sung, M. M.; 0000-0003-2781-5149 (Kim, J); 0000-0003-2698-7774 (Cho, K); 70133685 (Kim, J); 369148996084659752200 (Cho, K); Hwang, Jeongwoon; Kim, Jiyoung; Cho, KyeongjaeA quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate states. A composite nanolayer with zinc oxide quantum dots embedded in amorphous zinc oxide domains generated quantized conducting states at the mobility edge, which we refer to as “mobility edge quantization”. The unique quantized conducting state effectively restricted the occupied number of carriers due to its low density of states, which enable current saturation. Multi-value logic transistors were realized by applying a hybrid superlattice consisting of zinc oxide composite nanolayers and organic barriers as channels in the transistor. The superlattice channels produced multiple states due to current saturation of the quantized conducting state in the composite nanolayers. Our multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with no current fluctuation, and adjustable multi-level states. ©2019, The Author(s).