ZnO Composite Nanolayer with Mobility Edge Quantization for Multi-Value Logic Transistors



A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate states. A composite nanolayer with zinc oxide quantum dots embedded in amorphous zinc oxide domains generated quantized conducting states at the mobility edge, which we refer to as “mobility edge quantization”. The unique quantized conducting state effectively restricted the occupied number of carriers due to its low density of states, which enable current saturation. Multi-value logic transistors were realized by applying a hybrid superlattice consisting of zinc oxide composite nanolayers and organic barriers as channels in the transistor. The superlattice channels produced multiple states due to current saturation of the quantized conducting state in the composite nanolayers. Our multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with no current fluctuation, and adjustable multi-level states. ©2019, The Author(s).


Includes supplementary information


Diethylzinc, Nanocrystals, Quantum dots, Zinc oxide, Nanocomposites (Materials), Nanotechnology, Quantitative research, Quantum theory, Computer-aided design, Density functionals, High resolution electron microscopy, Molecular dynamics, Transmission electron microscopy, Ultraviolet spectroscopy


Creative Materials Discovery Program (2015M3D1A1068061); NRF (2017R1A2A1A17069769, 2017R1A5A1014862 and 2016R1A5A1012966).


CC BY 4.0 (Attribution), ©2019 The Authors