ZnO Composite Nanolayer with Mobility Edge Quantization for Multi-Value Logic Transistors

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dc.contributor.ORCID0000-0003-2781-5149 (Kim, J)
dc.contributor.ORCID0000-0003-2698-7774 (Cho, K)
dc.contributor.VIAF70133685 (Kim, J)
dc.contributor.VIAF369148996084659752200 (Cho, K)
dc.contributor.authorLee, L.
dc.contributor.authorHwang, Jeongwoon
dc.contributor.authorJung, J. W.
dc.contributor.authorKim, J.
dc.contributor.authorLee, H. -I
dc.contributor.authorHeo, S.
dc.contributor.authorYoon, M.
dc.contributor.authorChoi, S.
dc.contributor.authorVan Long, N.
dc.contributor.authorPark, J.
dc.contributor.authorJeong, J. W.
dc.contributor.authorKim, Jiyoung
dc.contributor.authorKim, K. R.
dc.contributor.authorKim, D. H.
dc.contributor.authorIm, S.
dc.contributor.authorLee, B. H.
dc.contributor.authorCho, Kyeongjae
dc.contributor.authorSung, M. M.
dc.contributor.utdAuthorHwang, Jeongwoon
dc.contributor.utdAuthorKim, Jiyoung
dc.contributor.utdAuthorCho, Kyeongjae
dc.date.accessioned2020-02-18T23:05:09Z
dc.date.available2020-02-18T23:05:09Z
dc.date.issued2019-04-30
dc.descriptionIncludes supplementary information
dc.description.abstractA quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate states. A composite nanolayer with zinc oxide quantum dots embedded in amorphous zinc oxide domains generated quantized conducting states at the mobility edge, which we refer to as “mobility edge quantization”. The unique quantized conducting state effectively restricted the occupied number of carriers due to its low density of states, which enable current saturation. Multi-value logic transistors were realized by applying a hybrid superlattice consisting of zinc oxide composite nanolayers and organic barriers as channels in the transistor. The superlattice channels produced multiple states due to current saturation of the quantized conducting state in the composite nanolayers. Our multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with no current fluctuation, and adjustable multi-level states. ©2019, The Author(s).
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.description.sponsorshipCreative Materials Discovery Program (2015M3D1A1068061); NRF (2017R1A2A1A17069769, 2017R1A5A1014862 and 2016R1A5A1012966).
dc.identifier.bibliographicCitationLee, L., J. Hwang, J. W. Jung, J. Kim, et al. 2019. "ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors." Nature Communications 10(1): art. 1998, doi: 10.1038/s41467-019-09998-x
dc.identifier.issn2041-1723
dc.identifier.issue1
dc.identifier.urihttp://dx.doi.org/10.1038/s41467-019-09998-x
dc.identifier.urihttps://hdl.handle.net/10735.1/7279
dc.identifier.volume10
dc.language.isoen
dc.publisherNature Publishing Group
dc.rightsCC BY 4.0 (Attribution)
dc.rights©2019 The Authors
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.source.journalNature Communications
dc.subjectDiethylzinc
dc.subjectNanocrystals
dc.subjectQuantum dots
dc.subjectZinc oxide
dc.subjectNanocomposites (Materials)
dc.subjectNanotechnology
dc.subjectQuantitative research
dc.subjectQuantum theory
dc.subjectComputer-aided design
dc.subjectDensity functionals
dc.subjectHigh resolution electron microscopy
dc.subjectMolecular dynamics
dc.subjectTransmission electron microscopy
dc.subjectUltraviolet spectroscopy
dc.titleZnO Composite Nanolayer with Mobility Edge Quantization for Multi-Value Logic Transistors
dc.title.alternativeNature Communications
dc.type.genrearticle

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