Browsing by Author "Hurley, P. K."
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Item Chemical and Electrical Characterization of the HfO2/InAlAs InterfaceBrennan, Barry; Galatage, Rohit V.; Thomas, K.; Pelucchi, E.; Hurley, P. K.; Kim, Jiyoung; Hinkle, Christopher L.; Vogel, E. M.; Wallace, Robert M.InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large Dit response in electrical measurements.Item Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics(American Institute of Physics Inc.) Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Hurley, P. K.; Hinkle, Christopher L.; Wallace, Robert M.; Young, Chadwin D.; 0000-0002-3530-6400 (Zhao, P); 0000-0001-5566-4806 (Wallace, RM); 0000-0003-0690-7423 (Young, CD); Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Hinkle, Christopher L.; Wallace, Robert M.; Young, Chadwin D.High quality sub-10 nm high-k dielectrics are deposited on top of MoS₂ and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO₂ and an Al₂O₃/HfO₂ bilayer shows significant improvement in device performance due to the insertion of the thin Al₂O₃ layer. The results show that the Al₂O₃ buffer layer improves the interface quality by effectively reducing the net fixed positive oxide charge at the top-gate MoS₂/high-k dielectric interface. Dual-gate sweeping, where both the top-gate and the back-gate are swept simultaneously, provides significant insight into the role of these oxide charges and improves overall device performance. Dual-gate transistors encapsulated in an Al₂O₃ dielectric demonstrate a near-ideal subthreshold swing of ~60 mV/dec and a high field effect mobility of 100 cm²/V·s.Item Sensitivity of High-k Encapsulated MoS₂ Transistors to I-V Measurement Execution Time(Institute of Electrical and Electronics Engineers Inc.) Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Wallace, Robert M.; Young, Chadwin D.; Hurley, P. K.; Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Wallace, Robert M.; Young, Chadwin D.High-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage. © 2018 IEEE.