Browsing by Author "Hwang, H. J."
Now showing 1 - 1 of 1
- Results Per Page
- Sort Options
Item Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process(Blackwell Publishing Ltd, 2019-05-06) Kim, S. -Y; Hwang, Jeongwoon; Kim, Y. J.; Hwang, H. J.; Son, M.; Revannath, N.; Ham, M. -H; Cho, Kyeongjie; Lee, B. H.; 0000-0003-2698-7774 (Cho, K); Hwang, Jeongwoon; Cho, KyeongjieA method to modulate the threshold voltage of a graphene–ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n-type dopant) and poly(acrylic acid) (as a p-type dopant), are used to pre-set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between −2.0 V (n-type graphene) and 1.2 V (p-type graphene) while modulating the Fermi level of the graphene by 120 meV. This process provides a scalable and facile method to adjust the threshold voltage of graphene–semiconductor junction-based devices, which is a crucial function required to implement graphene-based electronic devices in integrated circuits. ©2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim