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dc.contributor.authorFeng, Z.
dc.contributor.authorPeng, Y.
dc.contributor.authorLiu, H.
dc.contributor.authorSun, Y.
dc.contributor.authorWang, Y.
dc.contributor.authorMeng, M.
dc.contributor.authorLiu, H.
dc.contributor.authorWang, J.
dc.contributor.authorWu, R.
dc.contributor.authorWang, Xinglu
dc.contributor.authorCho, Kyeongjae
dc.contributor.authorHan, G.
dc.contributor.authorDong, H.
dc.date.accessioned2020-03-11T17:03:23Z
dc.date.available2020-03-11T17:03:23Z
dc.date.issued2019-05-25
dc.identifier.issn0169-4332
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2019.05.282
dc.identifier.urihttps://hdl.handle.net/10735.1/7389
dc.descriptionSupplementary material is available on publisher's website. Use the DOI link below.
dc.description.abstractHafnium zirconium oxide films have been utilized in negative capacitance (NC) field-effect transistors (FETs). The band alignment of semiconductor and HfZrOₓ film is critical to obtain high device performance. The band alignment of Hf₀.₅Zr₀.₅O₂/SiOₓ/Ge system before and after post deposition annealing at 500 °C is studied via angle resolved X-ray photoelectron spectroscopy, synchrotron radiation photoemission spectroscopy and UV–Visible spectroscopy. The band gap of Hf₀.₅Zr₀.₅O₂ is seen narrowed 0.27 ± 0.05 eV, and the valence band offset between Hf₀.₅Zr₀.₅O₂ and Ge decreases 0.25 eV ± 0.05 eV after PDA at 500 °C. Therefore, the conduction band offset is nearly unchanged. This work gives insights into the interface physics about Hf₀.₅Zr₀.₅O₂/SiOₓ and is valuable for Ge-based NC pFETs. ©2019 Elsevier B.V.
dc.description.sponsorshipNational Natural Science Foundation of China (No. 61504070, 61874081, 61534004,61604112, and 61622405), and the Tianjin Natural Science Foundation (No. 15JCYBJC52000)
dc.language.isoen
dc.publisherElsevier B.V.
dc.rights©2019 Elsevier B.V. All Rights Reserved.
dc.subjectGermanium
dc.subjectHafnium zirconium oxide
dc.subjectEnergy gap (Physics)
dc.subjectField-effect transistors
dc.subjectGermanium
dc.subjectHafnium oxides
dc.subjectMolecular orbitals
dc.subjectPhotoelectron spectroscopy
dc.subjectSilicon compounds
dc.subjectSynchrotron radiation
dc.subjectX ray photoelectron spectroscopy
dc.subjectField-effect transistors
dc.subjectZirconium compounds
dc.titleThe Band Structure Change of Hf₀.₅Zr₀.₅O₂/Ge System upon Post Deposition Annealing
dc.type.genrearticle
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationFeng, Z., Y. Peng, H. Liu, Y. Sun, et al. 2019. "The band structure change of Hf₀.₅Zr₀.₅O₂/Ge system upon post deposition annealing." Applied Surface Science 488: 778-782, doi: 10.1016/j.apsusc.2019.05.282
dc.source.journalApplied Surface Science
dc.identifier.volume488
dc.contributor.utdAuthorWang, Xinglu
dc.contributor.utdAuthorCho, Kyeongjae
dc.contributor.VIAF369148996084659752200 (Cho, K)
dc.contributor.ORCID0000-0003-2698-7774 (Cho, K)


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