Theoretical Study of Quantum Transport in Realistic Semiconductor Devices

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dc.contributor.advisorFischetti, Massimo V.
dc.creatorVyas, Pratik B.
dc.date.accessioned2019-10-01T19:44:32Z
dc.date.available2019-10-01T19:44:32Z
dc.date.created2019-05
dc.date.issued2019-05
dc.date.submittedMay 2019
dc.date.updated2019-10-01T19:46:42Z
dc.description.abstractSemiconductor devices have transformed the world through tremendous technological advances in all aspects of life imaginable. An important aspect of the research into improving these devices is computer-aided simulation and modeling of their electrical behavior. The ability to study theoretically semiconductor devices allows us to predict their behavior as well as optimize their performance before having to physically fabricate the device, saving us money and time. To this end, we have developed a novel approach, based on the effective mass approximation, to study theoretically quantum transport, both ballistic and dissipative, in realistic semiconductor devices. Our model takes into account quantum confinement and other non-local quantum effects affecting electronic transport in the current and nearfuture generations of transistors. As an example of application, we have studied the electrical behavior of well-known silicon field-effect transistors (FETs) and the factors affecting their performance.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://hdl.handle.net/10735.1/6947
dc.language.isoen
dc.rights©2019 Pratik B. Vyas
dc.subjectQuantum teleportation
dc.subjectSolid state physics
dc.subjectMesoscopic phenomena (Physics)
dc.subjectSurface roughness
dc.subjectElectrons—Scattering
dc.subjectPhonons—Scattering
dc.subjectMetal oxide semiconductors, Complementary
dc.titleTheoretical Study of Quantum Transport in Realistic Semiconductor Devices
dc.typeDissertation
dc.type.materialtext
thesis.degree.departmentElectrical Engineering
thesis.degree.grantorThe University of Texas at Dallas
thesis.degree.levelDoctoral
thesis.degree.namePHD

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