Deformation Potentials for Band-To-Band Tunneling in Silicon and Germanium from First Principles
| dc.contributor.author | Vandenberghe, William G. | en_US |
| dc.contributor.author | Fischetti, Massimo V. | en_US |
| dc.date.accessioned | 2015-03-30T16:53:03Z | |
| dc.date.available | 2015-03-30T16:53:03Z | |
| dc.date.created | 2015-01-08 | |
| dc.description.abstract | The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: D(TA) = 4.1 x 10⁸ eV/cm, D(TO) = 1.2 x 10⁹ eV/cm, and D(LO) = 2.2 x 10⁹ eV/cm for BTBT in silicon and D(TA) = 7.8 x 10⁸ eV/cm and D(LO) = 1.3 x 10⁹ eV/cm for BTBT in germanium. These values agree with experimentally measured values and we explain why in diodes, the TA/TO phonon-assisted BTBT dominates over LO phonon-assisted BTBT despite the larger deformation potential for the latter. We also explain why LO phonon-assisted BTBT can nevertheless dominate in many practical applications. | en_US |
| dc.description.sponsorship | "We acknowledge the support of the Nanoelectronics Research Initiative's (NRI's) Southwest Academy of Nanoelectronics (SWAN)." | en_US |
| dc.identifier.bibliographicCitation | Vandenberghe, W. G., and M. V. Fischetti. 2015. "Deformation potentials for band-to-band tunneling in silicon and germanium from first principles." Applied Physics Letters 106(1): doi:10.1063/1.4905591. | |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.issue | 1 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10735.1/4398 | |
| dc.identifier.volume | 106 | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | American Institute of Physics Inc. | en_US |
| dc.relation.uri | http://dx.doi.org/10.1063/1.4905591 | en_US |
| dc.rights | © 2015 AIP Publishing LLC | en_US |
| dc.source.journal | Applied Physics Letters | en_US |
| dc.subject | Phonons | en_US |
| dc.subject | Silicon | en_US |
| dc.subject | Germanium | en_US |
| dc.subject | Tunneling | en_US |
| dc.subject | Wave functions | en_US |
| dc.title | Deformation Potentials for Band-To-Band Tunneling in Silicon and Germanium from First Principles | en_US |
| dc.type.genre | article | en_US |