Metal-Organic Chemical Vapor Deposition of High Quality, High Indium Composition N-Polar InGaN Layers for Tunnel Devices

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dc.contributor.authorLund, C.en_US
dc.contributor.authorRomanczyk, B.en_US
dc.contributor.authorCatalano, Massimoen_US
dc.contributor.authorWang, Qingxiaoen_US
dc.contributor.authorLi, W.en_US
dc.contributor.authorDiGiovanni, D.en_US
dc.contributor.authorKim, Moon J.en_US
dc.contributor.authorFay, P.en_US
dc.contributor.authorNakamura, S.en_US
dc.contributor.authorDenBaars, S. P.en_US
dc.contributor.authorMishra, U. K.en_US
dc.contributor.authorKeller, S.en_US
dc.contributor.utdAuthorCatalano, Massimoen_US
dc.contributor.utdAuthorWang, Qingxiaoen_US
dc.contributor.utdAuthorKim, Moon J.en_US
dc.date.accessioned2018-08-24T21:13:33Z
dc.date.available2018-08-24T21:13:33Z
dc.date.created2017-05-12en_US
dc.date.issued2018-08-24
dc.description.abstractIn this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias. © 2017 Author(s).en_US
dc.description.departmentErik Jonsson School of Engineering and Computer Scienceen_US
dc.identifier.bibliographicCitationLund, C., B. Romanczyk, M. Catalano, Q. Wang, et al. 2017. "Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices." Journal of Applied Physics 121(18), doi:10.1063/1.4983300en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issue18en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/6026
dc.identifier.volume121en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4983300en_US
dc.rights©2017 The Authorsen_US
dc.source.journalJournal of Applied Physicsen_US
dc.subjectIndium compoundsen_US
dc.subjectOrganometallic compoundsen_US
dc.subjectThin filmsen_US
dc.subjectQuantum wellsen_US
dc.subjectTunnel diodesen_US
dc.titleMetal-Organic Chemical Vapor Deposition of High Quality, High Indium Composition N-Polar InGaN Layers for Tunnel Devicesen_US
dc.type.genrearticleen_US

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