Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

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dc.contributor.ORCID0000-0001-5566-4806 (Wallace, RM)
dc.contributor.authorLo, C. -L
dc.contributor.authorCatalano, Massimo
dc.contributor.authorKhosravi, Ava
dc.contributor.authorGe, W.
dc.contributor.authorJi, Y.
dc.contributor.authorZemlyanov, D. Y.
dc.contributor.authorWang, Luhua
dc.contributor.authorAddou, Rafik
dc.contributor.authorLiu, Y.
dc.contributor.authorWallace, Robert M.
dc.contributor.authorKim, Moon J.
dc.contributor.authorChen, Z.
dc.contributor.utdAuthorCatalano, Massimo
dc.contributor.utdAuthorKhosravi, Ava
dc.contributor.utdAuthorWang, Luhua
dc.contributor.utdAuthorAddou, Rafik
dc.contributor.utdAuthorWallace, Robert M.
dc.contributor.utdAuthorKim, Moon J.
dc.date.accessioned2020-06-02T20:53:02Z
dc.date.available2020-06-02T20:53:02Z
dc.date.issued2019-06-11
dc.descriptionSupplementary material is available on publisher's website. Use the DOI link below.
dc.descriptionDue to copyright restrictions and/or publisher's policy full text access from Treasures at UT Dallas is limited to current UTD affiliates (use the provided Link to Article).
dc.description.abstractThe interconnect half-pitch size will reach ≈20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross-section and they are much more resistive than Cu, the effective conductance of an ultrascaled interconnect will be compromised by the thick bilayer. Therefore, 2D layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back-end-of-line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaSₓ) with ≈1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaSx ultrathin film is industry-friendly, BEOL-compatible, and can be directly prepared on dielectrics. The results show superior barrier/liner properties of TaSₓ compared to the TaN/Ta bilayer. This single-stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node. ©2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.description.sponsorshipNIST through award number 70NANB17H041; NSF (Grant No. CCF‐1619062); Welch Foundation (Grant No. F‐1959‐20180324)
dc.identifier.bibliographicCitationLo, C. -L, M. Catalano, A. Khosravi, W. Ge, et al. 2019. "Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature." Advanced Materials 31(30): art. 1902397, doi: 10.1002/adma.201902397
dc.identifier.issn0935-9648
dc.identifier.issue30
dc.identifier.urihttp://dx.doi.org/10.1002/adma.201902397
dc.identifier.urihttps://hdl.handle.net/10735.1/8663
dc.identifier.volume31
dc.language.isoen
dc.publisherWiley-VCH Verlag
dc.rights©2019 WILEY-VCH Verlag GmbH & Co.
dc.source.journalAdvanced Materials
dc.subjectCopper—Diffusion rate
dc.subjectInterconnects (Integrated circuit technology)
dc.subjectReliability
dc.subjectNanotechnology
dc.subjectNitrogen compounds
dc.subjectOptical interconnects
dc.subjectSulfur compounds
dc.subjectTemperature
dc.subjectThin films
dc.subjectHigh temperatures
dc.subjectLow temperatures
dc.subjectTantalum compounds
dc.titleEnhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
dc.type.genrearticle

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