MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics

Simple item page
dc.contributor.VIAF70133685 (Kim, J)
dc.contributor.authorAzcatl, Angelicaen_US
dc.contributor.authorMcDonnell, Stephenen_US
dc.contributor.authorKC, Santoshen_US
dc.contributor.authorPeng, Xinen_US
dc.contributor.authorDong, Hongen_US
dc.contributor.authorQin, Xiaoyeen_US
dc.contributor.authorAddou, Rafiken_US
dc.contributor.authorMordi, Greg I.en_US
dc.contributor.authorLu, Ningen_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.authorKim, Moon J.en_US
dc.contributor.authorCho, Kyeongjaeen_US
dc.contributor.authorWallace, Robert M.en_US
dc.date.accessioned2014-08-20T22:34:44Z
dc.date.available2014-08-20T22:34:44Z
dc.date.created2014-03-09
dc.description.abstractThe effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon contamination from the MoS₂ surface and also functionalizes the MoS₂ surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of MoS₂ surface and provides nucleation sites for atomic layer deposition of Al₂O₃. The enhanced nucleation is found to be dependent on the thin film deposition temperature.en_US
dc.identifier.citationAzcatl, Angelica, Stephen McDonnell, K. C. Santosh, Xin Peng, et al. 2014. "MoS2 functionalization for ultra-thin atomic layer deposited dielectrics." Applied Physics Letters 104(111601): 1-4.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issue111601en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/3910
dc.identifier.volume104en_US
dc.language.isoenen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4869149en_US
dc.rights©2014 AIP Publishing LLCen_US
dc.source.journalApplied Physics Lettersen_US
dc.subjectGigaelectronvolts (GeV)en_US
dc.subjectSpecial relativity (Physics)en_US
dc.subjectDielectricsen_US
dc.subjectMolybdenum disulfideen_US
dc.titleMoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectricsen_US
dc.type.genrearticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECS-FR-RMWallace-309634.83.pdf
Size:
1.95 MB
Format:
Adobe Portable Document Format
Description:
Article
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
American Institute of Physics.pdf
Size:
245.03 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Wallace, Robert M.
Cho, Kyeongjae
Kim, Jiyoung
Kim, Moon J.