Pseudopotential-Based Electron Quantum Transport: Theoretical Formulation and Application to Nanometer-Scale Silicon Nanowire Transistors

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dc.contributor.authorFang, Jingtain
dc.contributor.authorVandenberghe, William G.
dc.contributor.authorFu, Bo
dc.contributor.authorFischetti, Massimo V.
dc.contributor.utdAuthorFang, Jingtain
dc.contributor.utdAuthorVandenberghe, William G.
dc.contributor.utdAuthorFu, Bo
dc.contributor.utdAuthorFischetti, Massimo V.
dc.date.accessioned2017-03-02T21:26:18Z
dc.date.available2017-03-02T21:26:18Z
dc.date.created2016-01-15
dc.description.abstractTBDen_US
dc.description.abstractWe present a formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials. This formalism offers explicit atomistic wavefunctions and an accurate band structure, enabling a detailed study of the characteristics of devices with a nanometer-scale channel and body. Assuming externally applied potentials that change slowly along the electron-transport direction, we invoke the envelope-wavefunction approximation to apply the open boundary conditions and to develop the transport equations. We construct the full-band open boundary conditions (self-energies of device contacts) from the complex band structure of the contacts. We solve the transport equations and present the expressions required to calculate the device characteristics, such as device current and charge density. We apply this formalism to study ballistic transport in a gate-all-around (GAA) silicon nanowire field-effect transistor with a body-size of 0.39 nm, a gate length of 6.52 nm, and an effective oxide thickness of 0.43 nm. Simulation results show that this device exhibits a subthreshold slope (SS) of ~66 mV/decade and a drain-induced barrier-lowering of ~2.5 mV/V. Our theoretical calculations predict that low-dimensionality channels in a 3D GAA architecture are able to meet the performance requirements of future devices in terms of SS swing and electrostatic control.en_US
dc.identifier.bibliographicCitationFang, J., W. G. Vandenberghe, B. Fu, and M. V. Fischetti. 2016. "Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors." Journal of Applied Physics 119(3), doi:10.1063/1.4939963en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/10735.1/5319
dc.languageEnglishen_US
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4939963en_US
dc.rights©2016 AIP Publishing LLC. This article may be downloaded for personal use only. .en_US
dc.sourceJournal of Applied Physicsen_US
dc.subjectBallisticsen_US
dc.subjectPenetration mechanicsen_US
dc.subjectBoundary value problemsen_US
dc.subjectField-effect transistorsen_US
dc.subjectGallium alloysen_US
dc.subjectNanowiresen_US
dc.subjectQuantum electronicsen_US
dc.subjectQuantum chemistryen_US
dc.titlePseudopotential-Based Electron Quantum Transport: Theoretical Formulation and Application to Nanometer-Scale Silicon Nanowire Transistorsen_US
dc.typeTexten_US
dc.type.genrearticleen_US

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