Spurious Dangling Bond Formation During Atomically Precise Hydrogen Depassivation Lithography on Si(100): The Role of Liberated Hydrogen

Simple item page
dc.contributor.authorBallard, Joshua B.en_US
dc.contributor.authorOwen, James H. G.en_US
dc.contributor.authorAlexander, Justin D.en_US
dc.contributor.authorOwen, William R.en_US
dc.contributor.authorFuchs, Ehuden_US
dc.contributor.authorRandall, John N.en_US
dc.contributor.authorLongo, Roberto C.en_US
dc.contributor.authorCho, Kyeongjaeen_US
dc.date.accessioned2014-08-21T16:29:29Z
dc.date.available2014-08-21T16:29:29Z
dc.date.created2014-03-1
dc.description.abstractThe production of spurious dangling bonds during the hydrogen depassivation lithography process on Si(100)-H is studied. It is shown that the number of spurious dangling bonds produced depends on the size of the primary pattern on the surface, not on the electron dose, indicating that the spurious dangling bonds are formed via an interaction of the liberated hydrogen with the surface. It is also shown that repassivation may occur if hydrogen depassivation lithography is performed near an already patterned area. Finally, it is argued that the product of the interaction is a single dangling bond next to a monohydride silicon on a silicon dimer, with a reaction probability much in excess of that previously observed.en_US
dc.description.sponsorship"This work was supported by a Contract from DARPA (N66001-08-C-2040) and by a grant from the Emerging Technology Fund of the State of Texas."en_US
dc.identifier.citationBallard, Joshua B., James H. G. Owen, Justin D. Alexander, William R. Owen, et al. 2014. "Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen." Journal of Vacuum Science & Technology B 32(021805): 1-4.en_US
dc.identifier.issn1071-1023en_US
dc.identifier.issue21805en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/3911
dc.identifier.volume32en_US
dc.language.isoenen_US
dc.publisherA V S Amer Inst Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1116/1.4864302en_US
dc.rights©2014 American Vacuum Societyen_US
dc.source.journalJournal of Vacuum Science & Technology Ben_US
dc.subjectHydrogen depassivation lithographyen_US
dc.subjectSurface patterningen_US
dc.subjectSurface passivationen_US
dc.subjectBackscatteringen_US
dc.subjectDangling bondsen_US
dc.subjectAtom surface interactionsen_US
dc.titleSpurious Dangling Bond Formation During Atomically Precise Hydrogen Depassivation Lithography on Si(100): The Role of Liberated Hydrogenen_US
dc.type.genrearticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECS-FR-KCho-309636.91.pdf
Size:
746.28 KB
Format:
Adobe Portable Document Format
Description:
Article
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
American Vacuum Society.pdf
Size:
228.56 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Cho, Kyeongjae
JECS Staff and Student Research