Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films




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American Institute of Physics Inc


Atomic-layer-deposited La₂O₃ films were grown on Si with different O₃ pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O₃ formed the solid SiO₂ interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO₃ on increasing the O₃ pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La₂O₃, during which most of the La₂O₃ phase was consumed at 400 °C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 °C.



Atomic layer deposition, Silicates, X-ray photoelectron spectroscopy, Thin films--Growth, Oxidation, Organic compounds

Future Semiconductor Device Technology Development Program (Grant No. 10045216); IT R & D program of MOTIE/KEIT (Grant No. 10048933); Basic Science Research Program through the NRF (National Research Foundation) of Korea funded by the MSIP (Ministry of Science, ICT & Future Planning) (No. 2015R1A5A1037548).


CC BY 4.0 (Attribution), ©2017 The Authors