Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films

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dc.contributor.authorPark, Tae Jooen_US
dc.contributor.authorByun, Young-Byunen_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.utdAuthorPark, Tae Jooen_US
dc.contributor.utdAuthorByun, Young-Byunen_US
dc.contributor.utdAuthorWallace, Robert M.en_US
dc.contributor.utdAuthorKim, Jiyoungen_US
dc.date.accessioned2018-09-24T15:27:08Z
dc.date.available2018-09-24T15:27:08Z
dc.date.created2017-02-03en_US
dc.date.issued2018-09-24
dc.description.abstractAtomic-layer-deposited La₂O₃ films were grown on Si with different O₃ pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O₃ formed the solid SiO₂ interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO₃ on increasing the O₃ pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La₂O₃, during which most of the La₂O₃ phase was consumed at 400 °C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 °C.en_US
dc.description.departmentErik Jonsson School of Engineering and Computer Scienceen_US
dc.description.sponsorshipFuture Semiconductor Device Technology Development Program (Grant No. 10045216); IT R & D program of MOTIE/KEIT (Grant No. 10048933); Basic Science Research Program through the NRF (National Research Foundation) of Korea funded by the MSIP (Ministry of Science, ICT & Future Planning) (No. 2015R1A5A1037548).en_US
dc.identifier.bibliographicCitationPark, T. J., Y. -C Byun, R. M. Wallace, and J. Kim. 2017. "Impurity and silicate formation dependence on O₃ pulse time and the growth temperature in atomic-layer-deposited La₂O₃ thin films." Journal of Chemical Physics 146(5), doi:10.1063/1.4975083en_US
dc.identifier.issn0021-9606en_US
dc.identifier.issue5en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/6104
dc.identifier.volume146en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4975083en_US
dc.rightsCC BY 4.0 (Attribution)en_US
dc.rights©2017 The Authorsen_US
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en_US
dc.source.journalJournal of Chemical Physicsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectSilicatesen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectThin films--Growthen_US
dc.subjectOxidationen_US
dc.subjectOrganic compoundsen_US
dc.titleImpurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Filmsen_US
dc.type.genrearticleen_US

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