Tuning Electronic Transport in Epitaxial Graphene-Based Van Der Waals Heterostructures

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dc.contributor.ORCID0000-0001-5566-4806 (Wallace, RM)en_US
dc.contributor.ORCID0000-0003-2698-7774 (Cho, K)en_US
dc.contributor.authorLin, Yu-Chuanen_US
dc.contributor.authorLi, Junen_US
dc.contributor.authorde la Barrera, Sergio,C.en_US
dc.contributor.authorEichfeld, Sarah M.en_US
dc.contributor.authorNie, Yifanen_US
dc.contributor.authorAddou, Rafiken_US
dc.contributor.authorMende, Patrick C.en_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.authorCho, Kyeongjaeen_US
dc.contributor.authorFeenstra, Randall M.en_US
dc.contributor.authorRobinson, Joshua A.en_US
dc.contributor.utdAuthorNie, Yifan
dc.contributor.utdAuthorAddou, Rafik
dc.contributor.utdAuthorWallace, Robert M.
dc.contributor.utdAuthorCho, Kyeongjae
dc.date.accessioned2018-06-01T15:07:53Z
dc.date.available2018-06-01T15:07:53Z
dc.date.created2016-04-07
dc.descriptionIncludes supplementary materialen_US
dc.description.abstractTwo-dimensional tungsten diselenide (WSe₂) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe₂-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe₂-graphene interface. Electrical transport measurements reveal a lower resistance between WSe₂ and fully hydrogenated epitaxial graphene (EGFH) compared to WSe₂ grown on partially hydrogenated epitaxial graphene (EGPH). Using low-energy electron microscopy and reflectivity on these samples, we extract the work function difference between the WSe₂ and graphene and employ a charge transfer model to determine the WSe₂ carrier density in both cases. The results indicate that WSe₂-EGFH displays ohmic behavior at small biases due to a large hole density in the WSe₂, whereas WSe₂-EGPH forms a Schottky barrier junction.;en_US
dc.identifier.bibliographicCitationLin, Yu-Chuan, Jun Li, Sergio,C. de la Barrera, Sarah M. Eichfeld, et al. 2016. "Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures." Nanoscale 8, doi: 10.1039/C6NR01902Aen_US
dc.identifier.issn2040-3372en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/5808
dc.publisherRSC Puben_US
dc.relation.urihttps://doi.org/10.1039/C6NR01902Aen_US
dc.rights©2016 The Royal Society of Chemistry. This article may not be further made available or distributed.en_US
dc.source.journalNanoscaleen_US
dc.subjectTungsten diselenide (WSe₂)en_US
dc.subjectSemiconductorsen_US
dc.subjectVan der Waals forcesen_US
dc.subjectGrapheneen_US
dc.subjectDiodes, Schottky-barrieren_US
dc.titleTuning Electronic Transport in Epitaxial Graphene-Based Van Der Waals Heterostructuresen_US
dc.type.genrearticleen_US

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Cho, Kyeongjae
Wallace, Robert M.