Selectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2x1) Surface

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dc.contributor.ISNI0000 0000 4239 3958 (Chabal, YJ)
dc.contributor.LCNA89624105 (Chabal, YJ)
dc.contributor.authorLongo, Roberto C.en_US
dc.contributor.authorMcDonnell, Stephenen_US
dc.contributor.authorDick, D.en_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.authorChabal, Yves J.en_US
dc.contributor.authorOwen, James H. G.en_US
dc.contributor.authorBallard, Josh B.en_US
dc.contributor.authorRandall, John N.en_US
dc.contributor.authorCho, Kyeongjaeen_US
dc.date.accessioned2014-10-07T15:13:40Z
dc.date.available2014-10-07T15:13:40Z
dc.date.created2014-02-10en_US
dc.date.issued2014-02-10en_US
dc.description.abstractIn this work, the authors used density-functional theory methods and x-ray photoelectron spectroscopy to study the chemical composition and growth rate of HfO₂, Al₂O₃, and TiO₂ thin films grown by in-situ atomic layer deposition on both oxidized and hydrogen-terminated Si(001) surfaces. The growth rate of all films is found to be lower on hydrogen-terminated Si with respect to the oxidized Si surface. However, the degree of selectivity is found to be dependent of the deposition material. TiO₂ is found to be highly selective with depositions on the hydrogen terminated silicon having growth rates up to 180 times lower than those on oxidized Si, while similar depositions of HfO₂ and Al₂O₃ resulted in growth rates more than half that on oxidized silicon. By means of density-functional theory methods, the authors elucidate the origin of the different growth rates obtained for the three different precursors, from both energetic and kinetic points of view.en_US
dc.identifier.bibliographicCitationLongo, Roberto C., Stephen McDonnell, D. Dick, R. M. Wallace, et al. 2014. "Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2x1) surface." Journal of Vacuum Science & Technology B 32(3): 03D112-1 to 6.en_US
dc.identifier.issn1071-1023en_US
dc.identifier.issue3en_US
dc.identifier.startpage3112en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4087
dc.identifier.volume32en_US
dc.language.isoenen_US
dc.publisherA V S Amer Inst Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1116/1.4864619en_US
dc.rights©2014 American Vacuum Societyen_US
dc.source.journalJournal of Vacuum Science and Technology Ben_US
dc.subjectSiliconen_US
dc.subjectHydrogenen_US
dc.subjectAtomic layer depositionen_US
dc.subjectFluorous Aciden_US
dc.subjectAluminum Oxideen_US
dc.subjectTitanium(IV) Oxideen_US
dc.titleSelectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2x1) Surfaceen_US
dc.type.genrearticleen_US

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Cho, Kyeongjae
Chabal, Yves J.
JECS Staff and Student Research
NSM Staff-Student Research
Wallace, Robert M.