Polytype Control of MoS₂ Using Chemical Bath Deposition

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dc.contributor.ORCID0000-0003-2114-3644 (Walker, AV)
dc.contributor.authorHedlund, Jenny K.
dc.contributor.authorWalker, Amy V.
dc.contributor.utdAuthorHedlund, Jenny K.
dc.contributor.utdAuthorWalker, Amy V.
dc.date.accessioned2020-05-05T19:51:25Z
dc.date.available2020-05-05T19:51:25Z
dc.date.issued2019-05-01
dc.description.abstractMolybdenum disulfide (MoS₂) has a wide range of applications from electronics to catalysis. While the properties of single-layer and multilayer MoS₂ films are well understood, controlling the deposited MoS₂ polytype remains a significant challenge. In this work, we employ chemical bath deposition, an aqueous deposition technique, to deposit large area MoS₂ thin films at room temperature. Using Raman spectroscopy and x-ray photoelectron spectroscopy, we show that the deposited MoS₂ polytype can be changed from semiconducting 2H MoS₂ on hydrophobic -CH₃ and -CO₂C₆F₅ terminated self-assembled monolayers (SAMs) to semimetallic 1T MoS₂ on hydrophilic -OH and -COOH terminated SAMs. The data suggest that the deposition of MoS₂ polytypes is controlled by the substrate surface energy. High surface energy substrates stabilize 1T MoS₂ films, while 2H MoS₂ is deposited on lower surface energy substrates. This effect appears to be general enabling the deposition of different MoS₂ polytypes on a wide range of substrates. ©2019 Author(s).
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.description.departmentSchool of Natural Sciences and Mathematics
dc.description.sponsorshipNational Science Foundation (Grant No. CHE 1708258).
dc.identifier.bibliographicCitationHedlund, J. K., and A. V. Walker. 2019. "Polytype control of MoS₂ using chemical bath deposition." Journal of Chemical Physics 150(17): art. 174701, doi: 10.1063/1.5089661
dc.identifier.issn0021-9606
dc.identifier.issue17
dc.identifier.urihttp://dx.doi.org/10.1063/1.5089661
dc.identifier.urihttps://hdl.handle.net/10735.1/8487
dc.identifier.volume150
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.rights©2019 The Authors
dc.source.journalJournal of Chemical Physics
dc.subjectSedimentation and deposition
dc.subjectSemiconductors
dc.subjectThin films, Multilayered
dc.subjectSulfur compounds
dc.subjectThin films
dc.subjectX-ray photoelectron spectroscopy
dc.subjectMolybdenum disulfide
dc.titlePolytype Control of MoS₂ Using Chemical Bath Deposition
dc.type.genrearticle

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