Oxidation of GaSb(100) and its Control Studied by Scanning Tunneling Microscopy and Spectroscopy

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dc.contributor.ORCID0000-0001-5566-4806 (Wallace, RM)en_US
dc.contributor.authorMakela, J.en_US
dc.contributor.authorTuominen, M.en_US
dc.contributor.authorYasir, M.en_US
dc.contributor.authorKuzmin, M.en_US
dc.contributor.authorDahl, J.en_US
dc.contributor.authorPunkkinen, M. P. J.en_US
dc.contributor.authorLaukkanen, P.en_US
dc.contributor.authorKokko, K.en_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.utdAuthorWallace, Robert M.
dc.date.accessioned2017-02-23T17:15:28Z
dc.date.available2017-02-23T17:15:28Z
dc.date.created2015-08-12en_US
dc.description.abstractAtomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 x 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 x 3)-O free of gap states.en_US
dc.identifier.bibliographicCitationMakela, J., M. Tuominen, M. Yasir, M. Kuzmin, et al. 2015. "Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy." Applied Physics Letters 107(6), doi:10.1063/1.4928544en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issue6en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/5270
dc.identifier.volume107en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4928544en_US
dc.rights©2015 AIP Publishing LLC.en_US
dc.source.journalApplied Physics Lettersen_US
dc.subjectGallium(III) Antimonideen_US
dc.subjectGallium alloysen_US
dc.subjectOxidationen_US
dc.subjectSemiconductorsen_US
dc.subjectScanning tunneling microscopyen_US
dc.subjectLow energy electron diffractionen_US
dc.titleOxidation of GaSb(100) and its Control Studied by Scanning Tunneling Microscopy and Spectroscopyen_US
dc.type.genrearticleen_US

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