Trimethyl-Aluminum and Ozone Interactions with Graphite in Atomic Layer Deposition of Al2O3


A study of the chemical interactions between the atomic layer deposition (ALD) Al2O3 precursors trimethlyaluminum (TMA) and ozone (TMA/O-3) and sp(2) carbon surfaces is presented. In-situ x-ray photoelectron spectroscopy is used to study these interactions, while ex-situ atomic force microscopy (AFM) is used to monitor the surface morphology. Ozone functionalization of the sp(2) carbon surface is discussed and the dependence of TMA/O-3 reactions over a range of ALD process conditions is examined. The utilization of a 6-cycle room temperature TMA/O-3 ALD seed layer to nucleate the conformal growth of Al2O3 by TMA/H2O at 200 degrees C as well as the quality of such films is discussed. Two stages of ozone reactions are observed: first the ozone appears to remove adsorbed species from the graphite surface before reacting with the surface. The deposition of Al2O3 is found to be strongly dependant on the N-2 purge time as well as the precursor pulse sequence. It is shown that the quality of these low temperature deposited films can easily be improved by removal of carbon containing species through an 300 degrees C anneal.



Graphene, Dielectrics, Atomic force microscopy, Ozone layer, Photoelectrons


© 2012 American Institute of Physics


McDonnell, Stephen, Adam R. Pirkle, Jiyoung Kim, Luigi Colombo, et al. 2012. "Trimethyl-aluminum and ozone interactions with graphite in atomic layer deposition of Al2O3." Journal of Applied Physics 112(104110).