Graded-Anisotropy-Induced Magnetic Domain Wall Drift for an Artificial Spintronic Leaky Integrate-and-Fire Neuron

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dc.contributor.ORCID0000-0001-9847-4455 (Friedman, JS)
dc.contributor.ORCID0000-0001-6202-3193 (Brigner, WH)
dc.contributor.ORCID0000-0002-7337-6637 (Hu, X)
dc.contributor.authorBrigner, Wesley H.
dc.contributor.authorHu, Xuan
dc.contributor.authorHassan, Naimul
dc.contributor.authorBennett, C. H.
dc.contributor.authorIncorvia, J. A. C.
dc.contributor.authorGarcia-Sanchez, F.
dc.contributor.authorFriedman, Joseph S.
dc.contributor.utdAuthorBrigner, Wesley H.
dc.contributor.utdAuthorHu, Xuan
dc.contributor.utdAuthorHassan, Naimul
dc.contributor.utdAuthorFriedman, Joseph S.
dc.date.accessioned2020-03-09T17:36:19Z
dc.date.available2020-03-09T17:36:19Z
dc.date.issued2019-03-11
dc.descriptionSupplementary material is available on publisher's website.
dc.description.abstractSpintronic three-terminal magnetic-tunnel-junction (3T-MTJ) devices have gained considerable interest in the field of neuromorphic computing. Previously, these devices required external circuitry to implement the leaking functionality that leaky integrate-and-fire (LIF) neurons should display. However, the use of external circuitry results in decreased device efficiency. We previously demonstrated lateral inhibition with a 3T-MTJ neuron that intrinsically performs the leaking, integrating, and firing functions; however, it required the fabrication of a complex multilayer structure. In this paper, we introduce an anisotropy gradient to implement a single-layer intrinsically leaking 3T-MTJ LIF neuron without the use of any external circuitry. This provides the leaking functionality with no hardware cost and reduced fabrication complexity, which increases the device, circuit, system, and cost efficiency.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationBrigner, W. H., X. Hu, N. Hassan, C. H. Bennett, et al. 2019. "Graded-Anisotropy-Induced Magnetic Domain Wall Drift for an Artificial Spintronic Leaky Integrate-and-Fire Neuron." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5(1): 19-24, doi: 10.1109/JXCDC.2019.2904191
dc.identifier.issn2329-9231
dc.identifier.issue1
dc.identifier.urihttp://dx.doi.org/10.1109/JXCDC.2019.2904191
dc.identifier.urihttps://hdl.handle.net/10735.1/7374
dc.identifier.volume5
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.rightsCC BY 3.0 (Attribution)
dc.rights©2019 The Authors
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.source.journalIEEE Journal on Exploratory Solid-State Computational Devices and Circuits
dc.subjectAnisotropy--Magnetoresistance
dc.subjectNeuromorphics--Computers
dc.subjectNeural networks (Neurobiology)
dc.subjectNeurons
dc.titleGraded-Anisotropy-Induced Magnetic Domain Wall Drift for an Artificial Spintronic Leaky Integrate-and-Fire Neuron
dc.type.genrearticle

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Friedman, Joseph S.