Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics

Simple item page
dc.contributor.ORCID0000-0002-3530-6400 (Zhao, P)
dc.contributor.ORCID0000-0001-5566-4806 (Wallace, RM)
dc.contributor.ORCID0000-0003-0690-7423 (Young, CD)
dc.contributor.authorBolshakov, Pavel
dc.contributor.authorKhosravi, Ava
dc.contributor.authorZhao, Peng
dc.contributor.authorHurley, P. K.
dc.contributor.authorHinkle, Christopher L.
dc.contributor.authorWallace, Robert M.
dc.contributor.authorYoung, Chadwin D.
dc.contributor.utdAuthorBolshakov, Pavel
dc.contributor.utdAuthorKhosravi, Ava
dc.contributor.utdAuthorZhao, Peng
dc.contributor.utdAuthorHinkle, Christopher L.
dc.contributor.utdAuthorWallace, Robert M.
dc.contributor.utdAuthorYoung, Chadwin D.
dc.date.accessioned2019-06-28T18:24:20Z
dc.date.available2019-06-28T18:24:20Z
dc.date.created2018-06-18
dc.descriptionIncludes supplementary material
dc.description.abstractHigh quality sub-10 nm high-k dielectrics are deposited on top of MoS₂ and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO₂ and an Al₂O₃/HfO₂ bilayer shows significant improvement in device performance due to the insertion of the thin Al₂O₃ layer. The results show that the Al₂O₃ buffer layer improves the interface quality by effectively reducing the net fixed positive oxide charge at the top-gate MoS₂/high-k dielectric interface. Dual-gate sweeping, where both the top-gate and the back-gate are swept simultaneously, provides significant insight into the role of these oxide charges and improves overall device performance. Dual-gate transistors encapsulated in an Al₂O₃ dielectric demonstrate a near-ideal subthreshold swing of ~60 mV/dec and a high field effect mobility of 100 cm²/V·s.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.description.sponsorshipNSF Award No. ECCS-1407765, and the SFI Award No. 13/US/I2862
dc.identifier.bibliographicCitationBolshakov, P., A. Khosravi, P. Zhao, P. K. Hurley, et al. 2018. "Dual-gate MoS₂ transistors with sub-10 nm top-gate high-k dielectrics." Applied Physics Letters 112(25): art. 256502, doi:10.1063/1.5027102
dc.identifier.issue25
dc.identifier.urihttps://hdl.handle.net/10735.1/6628
dc.identifier.volume112
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.relation.urihttp://dx.doi.org/10.1063/1.5027102
dc.rights©2018 The Authors
dc.source.journalApplied Physics Letters
dc.subjectAluminum oxide
dc.subjectDielectrics
dc.subjectField-effect transistors
dc.subjectHafnium oxide
dc.subjectSemiconductors
dc.subjectMolybdenum compounds
dc.subjectSulfur compounds
dc.titleDual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics
dc.type.genrearticle

Files

Original bundle

Now showing 1 - 2 of 2
Thumbnail Image
Name:
JECS-4400-279639.10.pdf
Size:
2.15 MB
Format:
Adobe Portable Document Format
Description:
Article
Download
No Thumbnail Available
Name:
JECS-4400-279639.10_S.odt
Size:
855.74 KB
Format:
OpenDocument Text
Description:
Supplement
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
AMERICAN INSTITUTE OF PHYSICS.pdf
Size:
275.37 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Young, Chadwin D.
Quevedo-López, Manuel A.
Wallace, Robert M.