Realization of the First GaN Based Tunnel Field-Effect Transistor

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dc.contributor.authorChaney, A.
dc.contributor.authorTurski, H.
dc.contributor.authorNomoto, K.
dc.contributor.authorWang, Qingxiao
dc.contributor.authorHu, Z.
dc.contributor.authorKim, Moon J.
dc.contributor.authorXing, H. G.
dc.contributor.authorJena, D.
dc.contributor.utdAuthorWang, Qingxiao
dc.contributor.utdAuthorKim, Moon J.
dc.date.accessioned2019-10-18T21:30:18Z
dc.date.available2019-10-18T21:30:18Z
dc.date.created2018-06-24
dc.descriptionFull text access from Treasures at UT Dallas is restricted to current UTD affiliates (use the provided Link to Article).
dc.description.abstractTunnel field-effect transistors (TFETs) offer the means to surpass the subthreshold swing (SS) limit of 60 mV/dec that limits MOSFETs. While MOSFETs rely on modulating a potential barrier, which is subject to a Boltzmann tail in the density of states (DOS), interband tunneling in TFETs enables a sharp turn off of the DOS because the transport is no longer governed by an exponential tail of carriers. These devices have been investigated in Si III-V material systems¹, achieving SS's as low as 20 mV/dec ². GaN is advantageous to these other material systems because its large bandgap is ideal for suppressing leakage current. Unfortunately impurity doping in GaN alone is not enough to achieve the internal fields required to promote interband tunneling[Fig l(a)]. However, by taking advantage of the difference in polarization fields between InGaN and GaN, a device structure favoring interband tunneling can be made [Fig l(b)]. Li et. al.³ have theoretically predicted that a GaN heterojunction TFET could obtain an SS of 15 mV/dec and a peak current of 1× 10⁻⁴ A/µm. For the work being presented, GaN TFETs were fabricated using a surrounding gate (SG) architecture utilizing both nanowires and fins formed from a top-down approach. © 2018 IEEE.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationChaney, A., H. Turski, K. Nomoto, Q. Wang, et al. 2018. "Realization of the first GaN based tunnel field-effect transistor." Device Research Conference, 76th, doi: 10.1109/DRC.2018.8442249
dc.identifier.isbn9781538630280
dc.identifier.issn1548-3770
dc.identifier.urihttps://hdl.handle.net/10735.1/7017
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.isPartOfDevice Research Conference, 76th
dc.relation.urihttp://dx.doi.org/10.1109/DRC.2018.8442249
dc.rights©2018 IEEE
dc.subjectHeterojunctions
dc.subjectSemiconductors
dc.subjectIndium alloys
dc.subjectMetal oxide semiconductor field-effect transistors
dc.subjectSilicon compounds
dc.subjectTunnel field-effect transistors
dc.subjectWide gap semiconductors
dc.subjectGallium nitride
dc.titleRealization of the First GaN Based Tunnel Field-Effect Transistor
dc.type.genrearticle

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