IC Laser Trimming Speed-up Through Wafer-Level Spatial Correlation Modeling

dc.contributor.advisorMakris, Yiorgos
dc.creatorXanthopoulos, Konstantinos
dc.date.accessioned2020-03-04T18:14:08Z
dc.date.available2020-03-04T18:14:08Z
dc.date.created2019-12
dc.date.issued2019-12
dc.date.submittedDecember 2019
dc.date.updated2020-03-04T18:14:09Z
dc.description.abstractLaser trimming is used extensively to ensure accurate values of on-chip precision resistors in the presence of process variations. Such laser resistor trimming is slow and expensive, typically performed in a closed-loop, where the laser is iteratively fired and some circuit parameter (i.e. current) is monitored until a target condition is satisfied. Toward reducing this cost, we introduce a novel methodology for predicting the laser trim length, thereby eliminating the closed-loop control and speeding up the process. Predictions are obtained from wafer-level spatial correlation models, learned from a sparse sample of die on which traditional trimming is performed. Effectiveness is demonstrated on an actual wafer of lasertrimmed ICs.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://hdl.handle.net/10735.1/7336
dc.language.isoen
dc.rights©2019 Konstantinos Xanthopoulos. All Rights Reserved.
dc.subjectLaser beam cutting
dc.subjectComputer adaptive testing
dc.subjectCost control
dc.titleIC Laser Trimming Speed-up Through Wafer-Level Spatial Correlation Modeling
dc.typeThesis
dc.type.materialtext
thesis.degree.departmentComputer Engineering
thesis.degree.grantorThe University of Texas at Dallas
thesis.degree.levelMasters
thesis.degree.nameMS

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