Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides

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dc.contributor.ORCID0000-0002-2910-2938 (Liang, C)en_US
dc.contributor.authorYue, Ruoyuen_US
dc.contributor.authorNie, Yifanen_US
dc.contributor.authorWalsh, Lee A.en_US
dc.contributor.authorAddou, Rafiken_US
dc.contributor.authorLiang, Chaopingen_US
dc.contributor.authorLu, Ningen_US
dc.contributor.authorBarton, Adam T.en_US
dc.contributor.authorZhu, Huien_US
dc.contributor.authorChe, Zifanen_US
dc.contributor.authorBarrera, Diegoen_US
dc.contributor.authorCheng, Lanxiaen_US
dc.contributor.authorCha, Pil-Ryungen_US
dc.contributor.authorChabal, Yves J.en_US
dc.contributor.authorHsu, Julia W. P.en_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.authorKim, Moon J.en_US
dc.contributor.authorColombo, Luigien_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.authorCho, Kyeongjaeen_US
dc.contributor.authorHinkle, Christopher L.en_US
dc.contributor.utdAuthorYue, Ruoyuen_US
dc.contributor.utdAuthorNie, Yifanen_US
dc.contributor.utdAuthorWalsh, Lee A.en_US
dc.contributor.utdAuthorAddou, Rafiken_US
dc.contributor.utdAuthorLiang, Chaopingen_US
dc.contributor.utdAuthorLu, Ningen_US
dc.contributor.utdAuthorBarton, Adam T.en_US
dc.contributor.utdAuthorZhu, Huien_US
dc.contributor.utdAuthorChe, Zifanen_US
dc.contributor.utdAuthorBarrera, Diegoen_US
dc.contributor.utdAuthorCheng, Lanxiaen_US
dc.contributor.utdAuthorChabal, Yves J.en_US
dc.contributor.utdAuthorHsu, Julia W. P.en_US
dc.contributor.utdAuthorKim, Jiyoungen_US
dc.contributor.utdAuthorKim, Moon J.en_US
dc.contributor.utdAuthorWallace, Robert M.en_US
dc.contributor.utdAuthorCho, Kyeongjaeen_US
dc.contributor.utdAuthorHinkle, Christopher L.en_US
dc.date.accessioned2018-09-24T15:34:12Z
dc.date.available2018-09-24T15:34:12Z
dc.date.created2017-09-22
dc.date.issued2017-09-22en_US
dc.description.abstractThe limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, the fundamental nucleation and growth behavior of WSe₂ is investigated through a detailed experimental design combined with on-lattice, diffusion-based first principles kinetic modeling to enable large area TMD growth. A three-stage adsorption-diffusion-attachment mechanism is identified and the adatom stage is revealed to play a significant role in the nucleation behavior. To limit the nucleation density and promote 2D layered growth, it is necessary to have a low metal flux in conjunction with an elevated substrate temperature. At the same time, providing a Se-rich environment further limits the formation of W-rich nuclei which suppresses vertical growth and promotes 2D growth. The fundamental understanding gained through this investigation has enabled an increase of over one order of magnitude in grain size for WSe₂ thus far, and provides valuable insight into improving the growth of other TMD compounds by MBE and other growth techniques such as chemical vapor deposition (CVD).en_US
dc.description.departmentErik Jonsson School of Engineering and Computer Scienceen_US
dc.description.sponsorshipNSF Award No. 1407765; National Research Foundation of Korea no. 2013K1A4A3055679en_US
dc.identifier.bibliographicCitationYue, Ruoyu, Yifan Nie, Lee A. Walsh, Rafik Addou, et al. 2017. "Nucleation and growth of WSe₂: enabling large grain transition metal dichalcogenides." 2d Materials 4, doi:10.1088/2053-1583/aa8ab5en_US
dc.identifier.issn2053-1583en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/6119
dc.identifier.volume4en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltden_US
dc.relation.urihttp://dx.doi.org/10.1088/2053-1583/aa8ab5
dc.relation.urihttp://dx.doi.org/10.1088/2053-1583/aa8ab5en_US
dc.rightsCC BY 3.0 (Attribution)en_US
dc.rights©2017 IOP Publishing, Ltd.en_US
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en_US
dc.source.journal2d Materialsen_US
dc.subjectTungsten diselenide, transition metal dichalcogenides, van der waals epitaxy, nucleation and growth, kinetic monte carlo simulationen_US
dc.subjectField-effect transistorsen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectScanning tunneling microscopyen_US
dc.subjectEpitaxyen_US
dc.subjectThin filmsen_US
dc.subjectSemiconductorsen_US
dc.subjectMolybdenum disulfideen_US
dc.subjectTungsten(IV) Selenideen_US
dc.subjectSeleniumen_US
dc.subjectMonte Carlo methoden_US
dc.titleNucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenidesen_US
dc.type.genrearticleen_US

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Hinkle, Christopher L.
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