Energies of the X- and L-Valleys in In(0.53)Ga(0.47) as from Electronic Structure Calculations

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dc.contributor.ORCID0000-0001-5926-0200 (Fischetti, MV)en_US
dc.contributor.authorGreene-Diniz, Gabrielen_US
dc.contributor.authorFischetti, Massimo V.en_US
dc.contributor.authorGreer, J. C.en_US
dc.date.accessioned2016-09-27T20:34:00Z
dc.date.available2016-09-27T20:34:00Z
dc.date.created2016-02-05
dc.descriptionIncludes erratumen_US
dc.description.abstractSeveral theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In(x)Ga(1-x)As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L-and X-valley minima are ~1 eV and ~1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.en_US
dc.description.sponsorshipSponsored in part by a grant from the European Union project DEEPEN (NMR 2013-1.4-1 grant agreement (604416)en_US
dc.identifier.bibliographicCitationGreene-Diniz, Gabriel, M. V. Fischetti, and J. C. Greer. 2016. "Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations." Journal of Applied Physics 119(5), doi:10.1063/1.4940740en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issue5en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/5082
dc.identifier.volume119en_US
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4940740en_US
dc.rights©2015 American Institute of Physicsen_US
dc.source.journalJournal of Applied Physicsen_US
dc.subjectSemiconductorsen_US
dc.subjectCrystalsen_US
dc.subjectMonte Carlo methoden_US
dc.subjectSphaleriteen_US
dc.subjectAlloysen_US
dc.titleEnergies of the X- and L-Valleys in In(0.53)Ga(0.47) as from Electronic Structure Calculationsen_US
dc.type.genrearticleen_US

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