Charged Impurity Scattering in Top-Gated Graphene Nanostructures
| dc.contributor.author | Ong, Zhun-Yong | en_US |
| dc.contributor.author | Fischetti, Massimo V. | en_US |
| dc.date.accessioned | 2013-10-11T16:18:14Z | |
| dc.date.available | 2013-10-11T16:18:14Z | |
| dc.date.created | 2012-9-24 | |
| dc.description.abstract | We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of these nanostructures, provides insights into the effect of the top gate on impurity scattering, and predicts that the carrier mobility in such graphene heterostructures decreases with increasing top dielectric thickness and higher carrier density. An increase of up to almost 60% in carrier mobility in ultrathin top-gated graphene is predicted. | en_US |
| dc.identifier.bibliographicCitation | Ong, Zhun-Yong, and Massimo V. Fischetti. 2012. "Charged impurity scattering in top-gated graphene nanostructures." Physical Review B 86(12): 121409. | |
| dc.identifier.citation | Ong, Zhun-Yong, and Massimo V. Fischetti. 2012. "Charged impurity scattering in top-gated graphene nanostructures." Physical Review B 86(12): 121409. | en_US |
| dc.identifier.issn | 1098-0121 | en_US |
| dc.identifier.issue | 12 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10735.1/2904 | |
| dc.identifier.volume | 86 | en_US |
| dc.relation.uri | http://dx.doi.org/10.1103/PhysRevB.86.121409 | en_US |
| dc.rights | © 2012 American Physical Society | en_US |
| dc.source.journal | Physical Review B | en_US |
| dc.subject | Field-effect transistors | en_US |
| dc.subject | Graphene | en_US |
| dc.subject | Nanostructures | en_US |
| dc.title | Charged Impurity Scattering in Top-Gated Graphene Nanostructures | en_US |
| dc.type | text | en_US |
| dc.type.genre | article | en_US |