Depression of the Normal-Superfluid Transition Temperature in Gated Bilayer Graphene

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dc.contributor.authorFischetti, Massimo V.en_US
dc.date.accessioned2014-10-06T19:14:06Z
dc.date.available2014-10-06T19:14:06Z
dc.date.created2014-04
dc.description.abstractIt is shown that the normal-superfluid transition in bilayer graphene predicted to occur at a high temperature is strongly affected not only by the dielectric constants of the substrate, interlayer, and gate insulators but also by the proximity of ideal metal gates. Even assuming optimistically a completely unscreened interlayer Coulomb interaction-thus bypassing the controversial problems regarding the proper way to screen the interlayer Coulomb interactions-it is shown that employing a gate-insulator thickness smaller than about 2-to-5 nm of equivalent SiO2-thickness pushes the transition temperature significantly below 300K to the 1 K-1mK range, depending on the dielectric constant of the gate insulator and on the dielectric mismatch of the insulators employed. These results imply that thicker and low-dielectric-constant gate insulators should be employed to observe the phase transition, but exploiting the superfluid state of gated graphene-bilayers in room-temperature device applications may be challenging.en_US
dc.identifier.citationFischetti, Massimo V.. 2014. "Depression of the normal-superfluid transition temperature in gated bilayer graphene." Journal of Applied Physics 115(16): 163711-1 to 11.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issue16en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4078
dc.identifier.volume115en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4873637en_US
dc.rights©2014 AIP Publishing LLCen_US
dc.source.journalJournal of Applied Physicsen_US
dc.subjectDielectricsen_US
dc.subjectSuperfluidityen_US
dc.subjectFermi energyen_US
dc.subjectGrapheneen_US
dc.subjectCoulomb functionsen_US
dc.titleDepression of the Normal-Superfluid Transition Temperature in Gated Bilayer Grapheneen_US
dc.type.genrearticleen_US

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