Phonon-Assisted Tunneling in Direct-Bandgap Semiconductors

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dc.contributor.ORCID0000-0001-9179-6443 (Van de Put, ML)
dc.contributor.authorMohammed, Mazharuddin
dc.contributor.authorVerhulst, Anne S.
dc.contributor.authorVerreck, Devin
dc.contributor.authorVan de Put, Maarten L.
dc.contributor.authorMagnus, Wim
dc.contributor.authorSoree, Bart
dc.contributor.authorGroeseneken, Guido
dc.contributor.utdAuthorVan de Put, Maarten L.
dc.date.accessioned2020-08-17T19:58:45Z
dc.date.available2020-08-17T19:58:45Z
dc.date.issued2019-01-02
dc.description.abstractIn tunnel field-effect transistors, trap-assisted tunneling (TAT) is one of the probable causes for degraded subthreshold swing. The accurate quantum-mechanical (QM) assessment of TAT currents also requires a QM treatment of phonon-assisted tunneling (PAT) currents. Therefore, we present a multi-band PAT current formalism within the framework of the quantum transmitting boundary method. An envelope function approximation is used to construct the electron-phonon coupling terms corresponding to local Frohlich-based phonon-assisted inter-band tunneling in direct-bandgap III-V semiconductors. The PAT current density is studied in up to 100 nm long and 20 nm wide p-n diodes with the 2- and 15-band material description of our formalism. We observe an inefficient electron-phonon coupling across the tunneling junction. We further demonstrate the dependence of PAT currents on the device length, for our non-self-consistent formalism which neglects changes in the electron distribution function caused by the electron-phonon coupling. Finally, we discuss the differences in doping dependence between direct band-to-band tunneling and PAT current. Published under license by AIP Publishing.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.identifier.bibliographicCitationMohammed, Mazharuddin, Anne S. Verhulst, Devin Verreck, Maarten L. Van de Put, et al. 2019. "Phonon-assisted tunneling in direct-bandgap semiconductors." Journal Of Applied Physics 125(1): art. 015701, doi: 10.1063/1.5044256
dc.identifier.issn0021-8979
dc.identifier.issue1
dc.identifier.urihttp://dx.doi.org/10.1063/1.5044256
dc.identifier.urihttps://hdl.handle.net/10735.1/8808
dc.identifier.volume125
dc.language.isoen
dc.publisherAmer Inst Physics
dc.rights©2018 The Authors
dc.source.journalJournal of Applied Physics
dc.subjectField-effect transistors
dc.subjectTunneling (Physics)
dc.subjectSemiconductors
dc.subjectElectron-phonon interactions
dc.titlePhonon-Assisted Tunneling in Direct-Bandgap Semiconductors
dc.type.genrearticle

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