Low Temperature Synthesis of Graphite on Ni Films Using Inductively Coupled Plasma Enhanced CVD

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dc.contributor.ResIDA-5283-2008 (Wallace, RM)en_US
dc.contributor.ResIDA-2297-2010 (Kim, MJ)en_US
dc.contributor.VIAF70133685 (Kim, J)en_US
dc.contributor.authorCheng, Lanxiaen_US
dc.contributor.authorYun, Kayoungen_US
dc.contributor.authorLucero, Antonioen_US
dc.contributor.authorHuang, Jieen_US
dc.contributor.authorMeng, Xinen_US
dc.contributor.authorLian, Guodaen_US
dc.contributor.authorNam, Ho-Seoken_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.authorKim, Moon J.en_US
dc.contributor.authorVenugopal, Archanaen_US
dc.contributor.authorColombo, Luigien_US
dc.contributor.authorKim, Jiyoungen_US
dc.date.accessioned2015-09-23T19:58:20Z
dc.date.available2015-09-23T19:58:20Z
dc.date.created2015-04-14
dc.descriptionIncludes supplementary informationen_US
dc.description.abstractControlled synthesis of graphite at low temperatures is a desirable process for a number of applications. Here, we present a study on the growth of thin graphite films on polycrystalline Ni films at low temperatures, about 380 ⁰C, using inductively coupled plasma enhanced chemical vapor deposition. Raman analysis shows that the grown graphite films are of good quality as determined by a low I-D/I-G ratio, ~0.43, for thicknesses ranging from a few layers of graphene to several nanometer thick graphitic films. The growth of graphite films was also studied as a function of time, precursor gas pressure, hydrogen concentration, substrate temperature and plasma power. We found that graphitic films can be synthesized on polycrystalline thin Ni films on SiO₂/Si substrates after only 10 seconds at a substrate temperature as low as 200 ⁰C. The amount of hydrogen radicals, adjusted by changing the hydrogen to methane gas ratio and pressure, was found to dramatically affect the quality of graphite films due to their dual role as a catalyst and an etchant. We also find that a plasma power of about 50 W is preferred in order to minimize plasma induced graphite degradation.en_US
dc.identifier.bibliographicCitationCheng, Lanxia, Kayoung Yun, Antonio Lucero, Jie Huang, et al. 2015. "Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD." Journal of Materials Chemistry C 3(20): 5192-5198 doi:10.1039/c5tc00635jen_US
dc.identifier.issn2050-7526en_US
dc.identifier.issue20en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4612
dc.identifier.volume3en_US
dc.language.isoenen_US
dc.publisherRoyal Soc Chemistryen_US
dc.relation.urihttp://dx.doi.org/10.1039/c5tc00635jen_US
dc.rights©2015 The Royal Society of Chemistry. This article may not be further made available or distributed.en_US
dc.source.journalJournal of Materials Chemistry Cen_US
dc.subjectChemical vapor depositionen_US
dc.subjectNanotubesen_US
dc.subjectRaman spectroscopyen_US
dc.subjectPlasma-enhanced chemical vapor depositionen_US
dc.subjectCopper foilen_US
dc.subjectHydrogenen_US
dc.subjectMaterials scienceen_US
dc.subjectPhysicsen_US
dc.titleLow Temperature Synthesis of Graphite on Ni Films Using Inductively Coupled Plasma Enhanced CVDen_US
dc.type.genrearticleen_US

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