Seeded Growth of Boron Arsenide Single Crystals with High Thermal Conductivity


Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000W m⁻¹ K⁻¹ at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m⁻¹ K⁻¹ at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.


Includes supplementary material


Crystallography, Polycrystals, Optoelectronic devices, Transition metals, Chemical elements, Arsenides, Thermal conductivity, Metrology

This work was funded by the Office of Naval Research under a MURI Grant N00014-16-1-2436, U.S. Air Force Office of Scientific Research Grant FA9550-15-1-0236.


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