Chemical Bonding and Defect States of LPCVD Grown Silicon-Rich Si₃N₄ for Quantum Dot Applications

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dc.contributor.ISNI0000 0001 2678 9765 (Malko, AV)
dc.contributor.authorMohammed, Shakilen_US
dc.contributor.authorNimmo, Michael T.en_US
dc.contributor.authorMalko, Anton V.en_US
dc.contributor.authorHinkle, Christopher L.en_US
dc.contributor.utdAuthorMohammed, Shakilen_US
dc.contributor.utdAuthorNimmo, Michael T.en_US
dc.contributor.utdAuthorMalko, Anton V.en_US
dc.contributor.utdAuthorHinkle, Christopher L.en_US
dc.date.accessioned2014-09-17T19:02:35Z
dc.date.available2014-09-17T19:02:35Z
dc.date.created2014-03en_US
dc.date.issued2014-03en_US
dc.description.abstractSi-rich Si₃N₄ (SRN) thin films were investigated to understand the various defect states present within the SRN that can lead to reduced performance in quantum dot based devices made of these materials. The SRN films, deposited by low pressure chemical vapor deposition followed by furnace anneals over a range of temperatures, were determined to be comprised of two distinct phase separated SRN regions with different compositions (precipitates within a host matrix). Photoluminescence (PL) spectra showed multiple peaks convoluted together within the visible and near-visible range. Depending on deposition and annealing conditions, the films displayed changes in PL peak intensities which were correlated with chemical bonding utilizing x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and capacitance-voltage measurements. It is found that the PL originates from defect-state to defect-state and band edge to defect-state electronic transitions.en_US
dc.identifier.bibliographicCitationMohammed, Shakil, Michael T. Nimmo, Anton V. Malko, and Christopher L. Hinkle. 2014. "Chemical bonding and defect states of LPCVD grown silicon-rich Si₃N₄ for quantum dot applications." Journal of Vacuum Science & Technology A 32(2), doi:10.1116/1.4861338en_US
dc.identifier.issn0734-2101en_US
dc.identifier.issue2en_US
dc.identifier.startpage21507en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4022
dc.identifier.volume32en_US
dc.language.isoenen_US
dc.publisherA V S: Science & Technology of Materials, Interfaces, and Processingen_US
dc.relation.urihttp://dx.doi.org/10.1116/1.4861338
dc.rights©2014 American Vacuum Societyen_US
dc.source.journalJournal of Vacuum Science & Technology Aen_US
dc.subjectSilicon (Si)en_US
dc.subjectSilicon nitrideen_US
dc.subjectPhotoluminescenceen_US
dc.subjectThin filmsen_US
dc.subjectLow pressure chemical vapor depositionen_US
dc.titleChemical Bonding and Defect States of LPCVD Grown Silicon-Rich Si₃N₄ for Quantum Dot Applicationsen_US
dc.type.genrearticleen_US

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Hinkle, Christopher L.
JECS Staff and Student Research
Malko, Anton V.
NSM Staff-Student Research