High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃

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dc.contributor.ORCID0000-0003-2781-5149 (Kim, J)
dc.contributor.ORCID0000-0001-5566-4806 (Wallace, RM)
dc.contributor.ORCID0000-0001-9901-9809 (Khosravi, A)
dc.contributor.ORCID0000-0002-5454-0315 (Addou, R)
dc.contributor.VIAF70133685 (Kim, J)
dc.contributor.authorKhosravi, Ava
dc.contributor.authorAddou, Rafik
dc.contributor.authorCatalano, Massimo
dc.contributor.authorKim, Jiyoung
dc.contributor.authorWallace, Robert M.
dc.contributor.utdAuthorKhosravi, Ava
dc.contributor.utdAuthorAddou, Rafik
dc.contributor.utdAuthorCatalano, Massimo
dc.contributor.utdAuthorKim, Jiyoung
dc.contributor.utdAuthorWallace, Robert M.
dc.date.accessioned2020-02-17T23:30:12Z
dc.date.available2020-02-17T23:30:12Z
dc.date.issued2019-03-30
dc.descriptionIncludes supplementary information
dc.description.abstractWe report an excellent growth behavior of a high-κ dielectric on ReS₂ , a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al₂O₃ thin film on the UV-Ozone pretreated surface of ReS₂ yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al₂O₃ thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al₂O₃ was achieved using a UV-Ozone pretreatment. The ReS₂ substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S-O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials. © 2019 by the authors.
dc.description.departmentErik Jonsson School of Engineering and Computer Science
dc.description.sponsorshipA Semiconductor Research Corporation (SRC) program sponsored by NIST through award number 70NANB17H041.
dc.identifier.bibliographicCitationKhosravi, A., R. Addou, M. Catalano, J. Kim, et al. 2019. "High-κ dielectric on ReS 2 : In-situ thermal versus plasma-enhanced atomic layer deposition of Al 2 O 3." Materials 12(7), doi: 10.3390/ma12071056
dc.identifier.issn1996-1944
dc.identifier.issue7
dc.identifier.urihttp://dx.doi.org/10.3390/ma12071056
dc.identifier.urihttps://hdl.handle.net/10735.1/7272
dc.identifier.volume12
dc.language.isoen
dc.publisherMDPI AG
dc.rightsCC BY 4.0 (Attribution)
dc.rights©2019 The Authors
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.source.journalMaterials
dc.subjectAtomic layer deposition (Plasma-enhanced)
dc.subjectRhenium sulfide
dc.subjectX-ray photoelectron spectroscopy
dc.subjectAluminum oxide
dc.subjectAtomic force microscopy
dc.subjectIndium compounds
dc.subjectMorphology
dc.subjectOzone
dc.subjectPhotoelectrons
dc.subjectPhotons
dc.subjectRhenium compounds
dc.subjectSulfur compounds
dc.subjectThin films
dc.subjectTransition metals
dc.titleHigh-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃
dc.title.alternativeMaterials
dc.type.genrearticle

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Wallace, Robert M.
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