Browsing by Author "Lee, B. H."
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Item Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process(Blackwell Publishing Ltd, 2019-05-06) Kim, S. -Y; Hwang, Jeongwoon; Kim, Y. J.; Hwang, H. J.; Son, M.; Revannath, N.; Ham, M. -H; Cho, Kyeongjie; Lee, B. H.; 0000-0003-2698-7774 (Cho, K); Hwang, Jeongwoon; Cho, KyeongjieA method to modulate the threshold voltage of a graphene–ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n-type dopant) and poly(acrylic acid) (as a p-type dopant), are used to pre-set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between −2.0 V (n-type graphene) and 1.2 V (p-type graphene) while modulating the Fermi level of the graphene by 120 meV. This process provides a scalable and facile method to adjust the threshold voltage of graphene–semiconductor junction-based devices, which is a crucial function required to implement graphene-based electronic devices in integrated circuits. ©2019 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimItem ZnO Composite Nanolayer with Mobility Edge Quantization for Multi-Value Logic Transistors(Nature Publishing Group, 2019-04-30) Lee, L.; Hwang, Jeongwoon; Jung, J. W.; Kim, J.; Lee, H. -I; Heo, S.; Yoon, M.; Choi, S.; Van Long, N.; Park, J.; Jeong, J. W.; Kim, Jiyoung; Kim, K. R.; Kim, D. H.; Im, S.; Lee, B. H.; Cho, Kyeongjae; Sung, M. M.; 0000-0003-2781-5149 (Kim, J); 0000-0003-2698-7774 (Cho, K); 70133685 (Kim, J); 369148996084659752200 (Cho, K); Hwang, Jeongwoon; Kim, Jiyoung; Cho, KyeongjaeA quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate states. A composite nanolayer with zinc oxide quantum dots embedded in amorphous zinc oxide domains generated quantized conducting states at the mobility edge, which we refer to as “mobility edge quantization”. The unique quantized conducting state effectively restricted the occupied number of carriers due to its low density of states, which enable current saturation. Multi-value logic transistors were realized by applying a hybrid superlattice consisting of zinc oxide composite nanolayers and organic barriers as channels in the transistor. The superlattice channels produced multiple states due to current saturation of the quantized conducting state in the composite nanolayers. Our multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with no current fluctuation, and adjustable multi-level states. ©2019, The Author(s).