Auciello, Orlando

Permanent URI for this collectionhttps://hdl.handle.net/10735.1/4008

Orlando Auciello holds a Distinguished Chair in Engineering and is a Professor of Materials Science and Engineering and Bioengineering. His expertise is in fusion energy, ferroelectric thin films found in non-volatile memories used in smart cards, and oxide films for supercapacitors.

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    Polycrystalline Diamond Films with Tailored Micro/Nanostructure/Doping for New Large Area Film-Based Diamond Electronics
    (Elsevier Science SA, 2018-12-03) Alcantar-Peña, Jesus J.; de Obaldia, Elida; Tirado, Pablo; Arellano-Jimenez, Maria J.; Aguilar, Jose E. Ortega; Veyan, Jean F.; Yacaman, Miguel J.; Koudriavtsev, Yuriy; Auciello, Orlando; Alcantar-Peña, Jesus J.; de Obaldia, Elida; Tirado, Pablo; Veyan, Jean F.; Auciello, Orlando
    This paper describes processes developed to change two key electrical properties (electrical resistivity and carrier type) of ultrananocrystalline diamond (UNCD) to microcrystalline diamond (MCD) films. The results show that the electrical properties of the investigated polycrystalline diamond films depend on the grain size and plasma treated grain boundary networks interfaces and external films' surfaces, in which hydrogen, fluorine or nitrogen can be incorporated to tailor electrical carriers-type to tune the electrical properties. Exploring the feasibility of modulating the resistivity of polycrystalline diamond films via tailoring of grain size, surface chemistry and nitrogen or fluorine incorporation into films' grain boundaries and external surfaces may enable applications of these diamond films as active or heat dissipation layers on micro/nano-electronic devices. This work can open the pathway to enabling an industrial process for new diamond-based electronics, since polycrystalline diamond films can be grown with extreme uniformity on 300 mm diameter Si wafers, used in manufacturing of current Si-based micro/nano-electronic devices.
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    Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering
    (Institute of Electrical and Electronics Engineers Inc.) Rai, A.; Park, J. H.; Zhang, Chenxi; Kwak, I.; Wolf, S.; Vishwanath, S.; Lin, X.; Furdyna, J.; Xing, H. G.; Cho, Kyeongjae; Kummel, A. C.; Banerjee, S. K.; 0000-0003-2698-7774 (Cho, K); 369148996084659752200 (Cho, K); Zhang, Chenxi; Cho, Kyeongjae
    Defect engineering of 2D semiconducting transition metal dichalcogenides (TMDCs) has been demonstrated to be a promising way to tune both their bandgaps and carrier concentrations. Moreover, controlled introduction of defects in the source/drain access regions of a TMDC FET can boost its performance by decreasing the contact resistance at the metallTMDC interface [1]. While chemical functionalization offers a facile route towards defect engineering in 2D TMDCs, several chemically-treated TMDCs have not been fully understood at the molecular level. In this study, chemical sulfur treatment (ST) utilizing ammonium sulfide [(NH4)2S] solution is shown to enhance the p-type behavior in 2D WSe2 via introduction of acceptor defect states near its valence band edge (VBE), with the results verified using detailed scanning tunneling microscopy (STM)/spectroscopy (STS) studies, field-effect transistor (FET) measurements and theoretical density-of-states (DOS) calculations.

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