Al₂O₃ on WSe₂ by Ozone Based Atomic Layer Deposition: Nucleation and Interface Study

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dc.contributor.ORCID0000-0001-5566-4806 (Wallace, RM)en_US
dc.contributor.authorAzcatl, Angelicaen_US
dc.contributor.authorWang, Qingxiaoen_US
dc.contributor.authorKim, Moon J.en_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.utdAuthorAzcatl, Angelicaen_US
dc.contributor.utdAuthorWang, Qingxiaoen_US
dc.contributor.utdAuthorKim, Moon J.en_US
dc.contributor.utdAuthorWallace, Robert M.en_US
dc.date.accessioned2018-06-01T16:12:39Z
dc.date.available2018-06-01T16:12:39Z
dc.date.created2017-08-22
dc.descriptionIncludes supplementary material.en_US
dc.description.abstractIn this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al₂O₃ films on WSe₂ was investigated. It was found that the ozone-based atomic layer deposition enhanced the nucleation of Al₂O₃ in comparison to the water/TMA process. In addition, the chemistry at the Al₂O₃ / WSe₂ interface and the surface morphology of the Al₂O₃ films exhibited a dependence on the deposition temperature. A non-covalent functionalizing effect of ozone on WSe₂ at low deposition temperatures 30 ⁰C was identified which prevented the formation of pinholes in the Al₂O₃ films. These findings aim to provide an approach to obtain high-quality gate dielectrics on WSe₂ for two-dimensional transistor applications.en_US
dc.description.departmentErik Jonsson School of Engineering and Computer Scienceen_US
dc.identifier.bibliographicCitationAzcatl, Angelica, Qingxiao Wang, Moon J. Kim, and Robert M. Wallace. 2017. "Al₂O₃ on WSe₂ by ozone based atomic layer deposition: Nucleation and interface study." APL Materials 5(8), doi:10.1063/1.4992120en_US
dc.identifier.issn2166-532Xen_US
dc.identifier.issue8en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/5813
dc.identifier.volume5en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4992120en_US
dc.rightsCC BY 4.0 (Attribution)en_US
dc.rights©2017 The Authorsen_US
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en_US
dc.source.journalAPL Materialsen_US
dc.subjectDielectricsen_US
dc.subjectCrystallographyen_US
dc.subjectAir--Pollutionen_US
dc.subjectSemimetalsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectChemicalsen_US
dc.subjectThin filmsen_US
dc.titleAl₂O₃ on WSe₂ by Ozone Based Atomic Layer Deposition: Nucleation and Interface Studyen_US
dc.type.genrearticleen_US

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