Performance and Stability of Solution-Based Cadmium Sulfide Thin Film Transistors: Role of CdS Cluster Size and Film Composition

Simple item page
dc.contributor.ISNI0000 0003 8371 1336 (Gnade, BE)
dc.contributor.LCNA00049719‏ (Gnade, BE)
dc.contributor.authorSalas-Villasenor, A. L.en_US
dc.contributor.authorMejia, I.en_US
dc.contributor.authorSotelo-Lerma, M.en_US
dc.contributor.authorGnade, Bruce E.en_US
dc.contributor.authorQuevedo-Lopez, Manuel A.en_US
dc.date.accessioned2014-03-25T21:34:01Z
dc.date.available2014-03-25T21:34:01Z
dc.date.created2012
dc.description.abstractImproved carrier mobility and threshold voltage (VT) stability in cadmium sulfide (CdS) thin film transistors (TFTs) were studied and attributed to larger grain clusters in thicker CdS films rather than individual crystallite size. Non-zero VT shifts (∼200 mV) in thicker films are attributed to the presence of cadmium hydroxide [Cd(OH)2] at the dielectric/CdS interface resulting from the chemical bath deposition process used to deposit the CdS films. VT and mobility analyses indicate that clusters of CdS grains have a larger impact on TFT performance and stability than the presence of impurities in the bulk of the CdS. TFTs using this fabrication method achieved mobilities of ∼22 cm2/Vs with V T of 7 V and ΔVT of <200 mV after testing. The maximum processing temperature is 100°C which makes this process compatible with flexible substrates.en_US
dc.identifier.citationSalas-Villasenor, A. L., I. Mejia, M. Sotelo-Lerma, B. E. Gnade, et al. 2012. "Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition." Applied Physics Letters 101(26): 262103.en_US
dc.identifier.issn36951en_US
dc.identifier.issue26en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/3221
dc.identifier.volume101en_US
dc.language.isoenen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4773184en_US
dc.rights© 2012 American Institute of Physicsen_US
dc.source.journalApplied Physics Lettersen_US
dc.subjectCadmium hydroxideen_US
dc.subjectCdSen_US
dc.subjectCdS filmsen_US
dc.subjectChemical bath deposition processen_US
dc.subjectCluster sizesen_US
dc.subjectFabrication methoden_US
dc.subjectFilm compositionen_US
dc.subjectFlexible substrateen_US
dc.subjectImpurities inen_US
dc.subjectMobility analysisen_US
dc.subjectProcessing temperatureen_US
dc.subjectCadmiumen_US
dc.subjectCadmium sulfideen_US
dc.subjectInterfaces (materials)en_US
dc.subjectThin filmsen_US
dc.subjectVapor depositionen_US
dc.subjectCadmium compoundsen_US
dc.titlePerformance and Stability of Solution-Based Cadmium Sulfide Thin Film Transistors: Role of CdS Cluster Size and Film Compositionen_US
dc.typetexten_US
dc.type.genrearticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECS-FR-Gnade-ApplPhysLett-310221.1.pdf
Size:
1.32 MB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
American Institute of Physics.pdf
Size:
234.96 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Gnade, Bruce E.