Covalent Nitrogen Doping in Molecular Beam Epitaxy-Grown and Bulk WSe₂
Date
2018-10-22
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Publisher
American Institute of Physics Inc
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Abstract
Covalent p-type doping of WSe₂ thin films grown by molecular beam epitaxy and WSe₂ exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe₂ lattice as well as tunable nitrogen concentration with N₂ plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe₂ lattice after N₂ plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N₂ plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.
Description
Includes supplementary material
Keywords
Atomic force microscopy, Semiconductor doping, Epitaxy, Molecular beam epitaxy, Molecular beams, Nitrogen, Nitrogen compounds, Nitrogen plasmas, Scanning tunneling microscopy, Selenium compounds, Materials—Compression testing, X-ray photoelectron spectroscopy, Tungsten compounds
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Rights
CC BY 4.0 (Attribution), ©2018 The Authors