Covalent Nitrogen Doping in Molecular Beam Epitaxy-Grown and Bulk WSe₂


Covalent p-type doping of WSe₂ thin films grown by molecular beam epitaxy and WSe₂ exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe₂ lattice as well as tunable nitrogen concentration with N₂ plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe₂ lattice after N₂ plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N₂ plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.


Includes supplementary material


Atomic force microscopy, Semiconductor doping, Epitaxy, Molecular beam epitaxy, Molecular beams, Nitrogen, Nitrogen compounds, Nitrogen plasmas, Scanning tunneling microscopy, Selenium compounds, Materials—Compression testing, X-ray photoelectron spectroscopy, Tungsten compounds


CC BY 4.0 (Attribution), ©2018 The Authors