Covalent Nitrogen Doping in Molecular Beam Epitaxy-Grown and Bulk WSe₂

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dc.contributor.ORCID0000-0002-5454-0315 (Addou, R)en_US
dc.contributor.ORCID0000-0003-2781-5149 (Kim, J)en_US
dc.contributor.ORCID0000-0001-5566-4806 (Wallace, RM)en_US
dc.contributor.VIAF70133685 (Kim, J)en_US
dc.contributor.authorKhosravi, Avaen_US
dc.contributor.authorAddou, Rafiken_US
dc.contributor.authorSmyth, Christopher M.en_US
dc.contributor.authorYue, Ruoyuen_US
dc.contributor.authorCormier, Christopher R.en_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.authorHinkle, Christopher L.en_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.utdAuthorAddou, Rafiken_US
dc.contributor.utdAuthorSmyth, Christopher M.en_US
dc.contributor.utdAuthorYue, Ruoyuen_US
dc.contributor.utdAuthorCormier, Christopher R.en_US
dc.contributor.utdAuthorKim, Jiyoungen_US
dc.contributor.utdAuthorHinkle, Christopher L.en_US
dc.contributor.utdAuthorWallace, Robert M.en_US
dc.date.accessioned2018-10-22T19:27:40Z
dc.date.available2018-10-22T19:27:40Z
dc.date.created2018-01-08en_US
dc.date.issued2018-10-22
dc.descriptionIncludes supplementary materialen_US
dc.description.abstractCovalent p-type doping of WSe₂ thin films grown by molecular beam epitaxy and WSe₂ exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe₂ lattice as well as tunable nitrogen concentration with N₂ plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe₂ lattice after N₂ plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N₂ plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.en_US
dc.description.departmentErik Jonsson School of Engineering and Computer Scienceen_US
dc.identifier.bibliographicCitationKhosravi, A., R. Addou, C. M. Smyth, R. Yue, et al. 2018. "Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe₂." APL Materials 6(2), doi:10.1063/1.5002132en_US
dc.identifier.issn2166-532Xen_US
dc.identifier.issue2en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/6207
dc.identifier.volume6en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.5002132en_US
dc.rightsCC BY 4.0 (Attribution)en_US
dc.rights©2018 The Authorsen_US
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en_US
dc.source.journalAPL Materialsen_US
dc.subjectAtomic force microscopyen_US
dc.subjectSemiconductor dopingen_US
dc.subjectEpitaxyen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectMolecular beamsen_US
dc.subjectNitrogenen_US
dc.subjectNitrogen compoundsen_US
dc.subjectNitrogen plasmasen_US
dc.subjectScanning tunneling microscopyen_US
dc.subjectSelenium compoundsen_US
dc.subjectMaterials—Compression testingen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectTungsten compoundsen_US
dc.titleCovalent Nitrogen Doping in Molecular Beam Epitaxy-Grown and Bulk WSe₂en_US
dc.type.genrearticleen_US

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