Accumulation Capacitance Frequency Dispersion of Ⅲ-Ⅴ Metal-Insulator-Semiconductor Devices due to Disorder Induced Gap States

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dc.contributor.authorGalatage, R. V.en_US
dc.contributor.authorZhernokletov, Dmitry M.en_US
dc.contributor.authorDong, Hongen_US
dc.contributor.authorBrennan, Barryen_US
dc.contributor.authorHinkle, Christopher L.en_US
dc.contributor.authorWallace, Robert M.en_US
dc.contributor.authorVogel, E. M.en_US
dc.date.accessioned2014-10-27T20:51:51Z
dc.date.available2014-10-27T20:51:51Z
dc.date.created2014-07-07en_US
dc.date.issued2014-07-07en_US
dc.description.abstractThe origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.en_US
dc.identifier.bibliographicCitationGalatage, R. V., D. M. Zhernokletov, H. Dong, B. Brennan, et al. 2014. "Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states." Journal of Applied Physics 116(1).
dc.identifier.issn1089-7550en_US
dc.identifier.issue1en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4144
dc.identifier.volume116en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4886715en_US
dc.rights©2014 AIP Publishing LLCen_US
dc.source.journalJournal of Applied Physicsen_US
dc.subjectFrequency dispersionen_US
dc.subjectIndium gallium arsenideen_US
dc.subjectIndium(III) Phosphideen_US
dc.subjectSemiconductorsen_US
dc.subjectCapacitanceen_US
dc.titleAccumulation Capacitance Frequency Dispersion of Ⅲ-Ⅴ Metal-Insulator-Semiconductor Devices due to Disorder Induced Gap Statesen_US
dc.type.genrearticleen_US

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