Figure of Merit for and Identification of Sub-60 mV/Decade Devices
dc.contributor.author | Vandenberghe, William G. | en_US |
dc.contributor.author | Verhulst, Anne S. | en_US |
dc.contributor.author | Soree, Bart | en_US |
dc.contributor.author | Magnus, Wim | en_US |
dc.contributor.author | Groeseneken, Guido | en_US |
dc.contributor.author | Smets, Quentin | en_US |
dc.contributor.author | Heyns, Marc | en_US |
dc.contributor.author | Fischetti, Massimo V. | en_US |
dc.date.accessioned | 2014-08-26T16:26:24Z | |
dc.date.available | 2014-08-26T16:26:24Z | |
dc.date.created | 2013-01-11 | |
dc.description.abstract | A figure of merit I₆₀ is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to super-60 mV/decade behavior. For sub-60 mV/decade devices to be competitive with metal-oxide-semiconductor field-effect devices, I₆₀ has to be in the 1-10 μA/μm range. The best experimental tunnel field-effect transistors (TFETs) in the literature only have an I₆₀ of 6 x 10⁻³ μA/μm but using theoretical simulations, we show that an I₆₀ of up to 10 μA/μm should be attainable. It is proven that the Schottky barrier FET (SBFET) has a 60 mV/decade subthreshold swing limit while combining a SBFET and a TFET does improve performance. | en_US |
dc.identifier.citation | Vandenberghe, William G., Anne S. Verhulst, Bart Soree, Wim Magnus, et al. 2013. "Figure of merit for and identification of sub-60 mV/decade devices." Applied Physics Letters 102(013510): . | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.issue | 13510 | en_US |
dc.identifier.uri | http://hdl.handle.net/10735.1/3927 | |
dc.identifier.volume | 102 | en_US |
dc.relation.uri | http://dx.doi.org/10.1063/1.4773521 | en_US |
dc.rights | ©2013 American Institute of Physics | en_US |
dc.source.journal | Applied Physics Letters | en_US |
dc.subject | Lithium air batteries | en_US |
dc.subject | Metal oxide semiconductor field-effect transistors | en_US |
dc.subject | Tunneling | en_US |
dc.subject | Field-effect transistors | en_US |
dc.subject | Ferroelectric devices | en_US |
dc.title | Figure of Merit for and Identification of Sub-60 mV/Decade Devices | en_US |
dc.type.genre | article | en_US |
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